4H N Type SiC Crystal,4”Size -SiC Wafer Manufacturer

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.

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SILICON CARBIDE MATERIAL PROPERTIES

4H N Type SiC Crystal,4”Size

SiC Crystal Structure

SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.For more details, please enquire our engineer team.

SiC Optoelectronic Devices

The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics.

6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices

to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to reach

high-volume commercial sales . Because SiC’s bandgap is indirect (i.e., the conduction minimum

and valence band maximum do not coincide in crystal momentum space), luminescent recombination

is inherently inefficient . Therefore, LEDs based on SiC pn junctions were rendered quite obsolete

by the emergence of much brighter, much more efficient direct-bandgap Group III-nitride (III-N such

as GaN, and InGaN) blue LEDs . However, SiC wafers are still employed as one of the substrates

(along with sapphire) for growth of III-N layers used in high-volume manufacture of green and blue

nitride-based LEDs.

SiC has proven much more efficient at absorbing short-wavelength light, which has enabled the

realization of SiC UV-sensitive photodiodes that serve as excellent flame sensors in turbine-engine

combustion monitoring and control . The wide bandgap of 6H-SiC is useful for realizing

low photodiode dark currents as well as sensors that are blind to undesired near-infrared wavelengths

produced by heat and solar radiation. Commercial SiC-based UV flame sensors, again based on epitaxially

grown dry-etch mesa-isolated 6H-SiC pn junction diodes, have successfully reduced harmful pollution

emissions from gas-fired ground-based turbines used in electrical power generation systems . The

low dark-currents of SiC diodes are also useful for X-ray, heavy ion, and neutron detection in nuclear

reactor monitoring and enhanced scientific studies of high-energy particle collisions and cosmic

radiation .

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.