4H High Purity Semi Insulating SiC Wafer , Research Grade , Epi Ready , 2”Size

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.

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SILICON CARBIDE MATERIAL PROPERTIES

4H High Purity Semi Insulating Silicon Carbide Wafer, Dummy Grade,Epi Ready,2”Size

Single crystal SiC Properties

Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.

Property of Silicon Carbide (SiC)

Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:

*Reference:CRC Materials Science and Engineering Handbook

Comparision of Property of single crystal SiC, 6H and 4H:

*Reference:Xiamen Powerway Advanced Material Co.,Ltd.

Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:

* Reference: IOFFE

SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim

Introduction

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed
for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors
cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions
is expected to enable significant improvements to a far-ranging variety of applications and systems.
These range from greatly improved high-voltage switching for energy savings in public electric power
distribution and electric motor drives to more powerful microwave electronics for radar and communications
to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile
engines. In the particular area of power devices, theoretical appraisals have indicated that SiC
power MOSFET’s and diode rectifiers would operate over higher voltage and temperature ranges, have
superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly
rated silicon-based devices. However, these tremendous theoretical advantages have yet to be widely
realized in commercially available SiC devices, primarily owing to the fact that SiC’s relatively immature
crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required
for reliable incorporation into most electronic systems.
This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences
(both good and bad) between SiC electronics technology and the well-known silicon VLSI technology
are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale
applications. Key crystal growth and device-fabrication issues that presently limit the performance and
capability of high-temperature and high-power SiC electronics are identified.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.