6H N Type SiC Wafer, Dummy Grade,2”Size -SiC Wafer Supplier

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.

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SILICON CARBIDE MATERIAL PROPERTIES

6H N Type SiC Wafer, Dummy Grade,2”Size

Single crystal SiC Properties

Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.

Property of Silicon Carbide (SiC)

Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:

*Reference:CRC Materials Science and Engineering Handbook

Comparision of Property of single crystal SiC, 6H and 4H:

*Reference:Xiamen Powerway Advanced Material Co.,Ltd.

Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:

*Reference: IOFFE

SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim.

Thermal Expansion Coefficient:

Thermal expansion is the tendency of matter to change in volume in response to a change in temperature.
When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are rare; this effect is limited in size, and only occurs within limited temperature ranges (see examples below). The degree of expansion divided by the change in temperature is called the material's coefficient of thermal expansion and generally varies with temperature.

The coefficient of thermal expansion describes how the size of an object changes with a change in temperature. Specifically, it measures the fractional change in size per degree change in temperature at a constant pressure. Several types of coefficients have been developed: volumetric, area, and linear. Which is used depends on the particular application and which dimensions are considered important. For solids, one might only be concerned with the change along a length, or over some area.
The volumetric thermal expansion coefficient is the most basic thermal expansion coefficient. In general, substances expand or contract when their temperature changes, with expansion or contraction occurring in all directions. Substances that expand at the same rate in every direction are called isotropic. For isotropic materials, the area and linear coefficients may be calculated from the volumetric coefficient.

Mathematical definitions of these coefficients are defined below for solids, liquids, and gasses.

General volumetric thermal expansion coefficient In the general case of a gas, liquid, or solid, the volumetric coefficient of thermal expansion is given by

The subscript p indicates that the pressure is held constant during the expansion, and the subscript "V" stresses that it is the volumetric (not linear) expansion that enters this general definition. In the case of a gas, the fact that the pressure is held constant is important, because the volume of a gas will vary appreciably with pressure as well as temperature. For a gas of low density this can be seen from the ideal gas law.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.