4H N Type SiC (Silicon Carbide)Wafer, Research Grade,Epi Ready,2”Size​

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available. Please contact us for more information.

SILICON CARBIDE MATERIAL PROPERTIES

4H N Type SiC Wafer, Research Grade,Epi Ready,2”Size

sic crystal defects

Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations, stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or the Wurtzite structure, like the IDBs. Micropipes and inclusions from other phases mainly appear in SiC.

Refraction Index:

In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium.

Refractive index of materials varies with the wavelength. This is called dispersion; it causes the splitting of white light in prisms and rainbows, and chromatic aberration in lenses. Inopaque media, the refractive index is a complex number: while the real part describes refraction, the imaginary part accounts for absorption.

The concept of refractive index is widely used within the full electromagnetic spectrum, from x-rays to radio waves. It can also be used with wave phenomena other than light (e.g.,sound). In this case the speed of sound is used instead of that of light and a reference medium other than vacuum must be chosen.

For infrared light refractive indices can be considerably higher. Germanium is transparent in a wavelength of 589 nanometers and has a refractive index of about 4, making it an important material for infrared optics.

SiC refraction index: 2.55 (infrared; all polytypes)

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.