4H N Type SiC , Production Grade With Low Defect Density , 6”Size

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.

Here shows detail specification:

SILICON CARBIDE MATERIAL PROPERTIES

4H N Type SiC, Production Grade,6”Size

SiC crystal application

Many researchers know the general SiCapplication:III-V Nitride Deposition;OptoelectronicDevices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, We list some detail application and make some explanations.

Detail Application of Silicon Carbide

Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.

Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, here we list some detail application and make some explanations:
1. SiC substrate for X-ray monochromators:such as,using SiC's large d-spacing of about 15 A;
2. SiC substrate for high voltage devices;
3. SiC substrate for diamond film growth by microwave plasma-enhanced chemical vapor deposition;
4. For silicon carbide p-n diode;
5. SiC substrate for optical window: such as for very short (< 100 fs) and intense (> 100 GW/cm2) laser pulses with a wavelength of 1300 nm. It should have a low absorption coefficient and a low two photon absorption coefficient for 1300 nm.
6. SiC substrate for heat spreader: For example,the Silicon carbide crystal will be capillary bonded on a flat gain chip surface of VECSEL (Laser) to remove the generated pump heat. Therefore, the following properties are important:
1) Semi-insulating type required to prevent free carrier absorption of the laser light;

2) Double side polished are preferred;

3) Surface roughness: < 2nm, so that the surface is enough flat for bonding;

7. SiC substrate for THz system application: Normally it require THz transparency

8. SiC substrate for epitaxial graphene on SiC:Graphene epitaxy on off axis substrate and on axis are both available, surface side on C-face or Si face are both available.

9. SiC substrate for process development loke ginding, dicing and etc

10. SiC substrate for fast photo-electric switch

11. SiC substrate for heat sink: thermal conductivity and thermal expansion are concerned.

12. SiC substrate for laser: optical, surface and stranparence are concerned.

13. SiC substrate for III-V epitaxy, normally off axis substrate are required.

Xiamen Powerway Advanced Material Co.,Limited is an expert in SiC substrate, he can give researchers suggestions in different application

SiC High-Power Rectifiers

The high-power diode rectifier is a critical building block of power conversion circuits. Recent reviews of experimental SiC rectifier results are given in References 3, 134, 172, 180, and 181. Most important SiC diode rectifier device design trade-offs roughly parallel well-known silicon rectifier trade-offs, except for the fact that current densities, voltages, power densities, and switching speeds are much higher in SiC. For example, semiconductor Schottky diode rectifiers are majority carrier devices that are well known to exhibit very fast switching owing to the absence of minority carrier charge storage that dominates (i.e., slows, adversely resulting in undesired waste power and heat) the switching operation of bipolar pn junction rectifiers. However, the high breakdown field and wide energy bandgap permit operation of SiC metal–semiconductor Schottky diodes at much higher voltages (above 1 kV) than is practical with siliconbased Schottky diodes that are limited to operation below ~200 V owing to much higher reverse-bias thermionic leakage.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.