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N Type , Semiconducting Gallium Arsenide Wafer , 6”, Test Grade

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N Type , Semiconducting Gallium Arsenide Wafer , 6”, Test Grade

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Brand Name :	PAM-XIAMEN
Payment Terms :	T/T
Supply Ability :	10,000 wafers/month
Delivery Time :	5-50 working days

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N Type , Semiconducting Gallium Arsenide Wafer , 6”, Test Grade

N Type , Semiconducting Gallium Arsenide Wafer , 6”, Test Grade

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications. We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

Item	Specifications
Conduction Type	SC/n-type
Growth Method	VGF
Dopant	Silicon
Wafer Diamter	6, inch
Crystal Orientation	(100)10⁰off (110)
OF	EJ or US
Carrier Concentration	(0.4~2.5)E18/cm3
Resistivity at RT	(1.5~9)E-3 Ohm.cm
Mobility	1500~3000cm2/V.sec
Etch Pit Density	<5000/cm2
Laser Marking	upon request
Surface Finish	P/E or P/P
Thickness	220~650um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers for LD Applications

Item	Specifications	Remarks
Conduction Type	SC/n-type
Growth Method	VGF
Dopant	Silicon
Wafer Diamter	6, inch	Ingot or as-cut available
Crystal Orientation	(100)10⁰off (110)	Other misorientation available
OF	EJ or US
Carrier Concentration	(0.4~2.5)E18/cm3
Resistivity at RT	(1.5~9)E-3 Ohm.cm
Mobility	1500~3000 cm2/V.sec
Etch Pit Density	<500/cm2
Laser Marking	upon request
Surface Finish	P/E or P/P
Thickness	220~650um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

Properties of GaAs Crystal

Properties	GaAs
Atoms/cm³	4.42 x 10²²
Atomic Weight	144.63
Breakdown Field	approx. 4 x 10⁵
Crystal Structure	Zincblende
Density (g/cm³)	5.32
Dielectric Constant	13.1
Effective Density of States in the Conduction Band, Nc (cm^-3)	4.7 x 10¹⁷
Effective Density of States in the Valence Band, Nv (cm^-3)	7.0 x 10¹⁸
Electron Affinity (V)	4.07
Energy Gap at 300K (eV)	1.424
Intrinsic Carrier Concentration (cm^-3)	1.79 x 10⁶
Intrinsic Debye Length (microns)	2250
Intrinsic Resistivity (ohm-cm)	108
Lattice Constant (angstroms)	5.6533
Linear Coefficient of Thermal Expansion,	6.86 x 10^-6
ΔL/L/ΔT (1/deg C)	6.86 x 10^-6
Melting Point (deg C)	1238
Minority Carrier Lifetime (s)	approx. 10^-8
Mobility (Drift)	8500
(cm²/V-s)
µ_n, electrons
Mobility (Drift)	400
(cm²/V-s)
µ_p, holes
Optical Phonon Energy (eV)	0.035
Phonon Mean Free Path (angstroms)	58
Phonon Mean Free Path (angstroms)	58
Specific Heat	0.35
(J/g-deg C)	0.35
Thermal Conductivity at 300 K	0.46
(W/cm-degC)	0.46
Thermal Diffusivity (cm²/sec)	0.24
Vapor Pressure (Pa)	100 at 1050 deg C;
Vapor Pressure (Pa)	1 at 900 deg C


Wavelength	Index
(µm)	Index
2.6	3.3239
2.8	3.3204
3	3.3169
3.2	3.3149
3.4	3.3129
3.6	3.3109
3.8	3.3089
4	3.3069
4.2	3.3057
4.4	3.3045
4.6	3.3034
4.8	3.3022
5	3.301
5.2	3.3001
5.4	3.2991
5.6	3.2982
5.8	3.2972
6	3.2963
6.2	3.2955
6.4	3.2947
6.6	3.2939
6.8	3.2931
7	3.2923
7.2	3.2914
7.4	3.2905
7.6	3.2896
7.8	3.2887
8	3.2878
8.2	3.2868
8.4	3.2859
8.6	3.2849
8.8	3.284
9	3.283
9.2	3.2818
9.4	3.2806
9.6	3.2794
9.8	3.2782
10	3.277
10.2	3.2761
10.4	3.2752
10.6	3.2743
10.8	3.2734
11	3.2725
11.2	3.2713
11.4	3.2701
11.6	3.269
11.8	3.2678
12	3.2666
12.2	3.2651
12.4	3.2635
12.6	3.262
12.8	3.2604
13	3.2589
13.2	3.2573
13.4	3.2557
13.6	3.2541

What is a GaAs Test Wafer?

Most GaAs test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

What is the Electrical propertiesof GaAs Wafer

Basic Parameters

Breakdown field	≈4·105 V/cm
Mobility electrons	≤8500 cm2 V-1s-1
Mobility holes	≤400 cm2 V-1s-1
Diffusion coefficient electrons	≤200 cm2/s
Diffusion coefficient holes	≤10 cm2/s
Electron thermal velocity	4.4·105 m/s
Hole thermal velocity	1.8·105m/s

Mobility and Hall Effect

Electron Hall mobility versus temperature for different doping levels.

1. Bottom curve: Nd=5·1015cm-3;
2. Middle curve : Nd=1015cm-3;
3. Top curve : Nd=5·1015cm-3
For weakly doped GaAs at temperature close to 300 K, electron Hall mobility
µH=9400(300/T) cm2 V-1 s-1

Electron Hall mobility versus temperature for different doping levels and degrees of compensation (high temperatures):
Open circles: Nd=4Na=1.2·1017 cm-3;
Open squares: Nd=4Na=1016 cm-3;
Open triangles: Nd=3Na=2·1015 cm-3;
Solid curve represents the calculation for pure GaAs
For weakly doped GaAs at temperature close to 300 K, electron drift mobility
µn=8000(300/T)2/3 cm2 V-1 s-1

Drift and Hall mobility versus electron concentration for different degrees of compensation T= 77 K

Drift and Hall mobility versus electron concentration for different degrees of compensation T= 300 K

Approximate formula for the Hall mobility

. µn =µOH/(1+Nd·10-17)1/2, where µOH≈9400 (cm2 V-1 s-1), Nd- in cm-3
.

Temperature dependence of the Hall factor for pure n-type GaAs in a weak magnetic field

Temperature dependence of the Hall mobility for three high-purity samples

For GaAs at temperatures close to 300 K, hole Hall mobility

(cm2V-1s-1), (p - in cm-3)
For weakly doped GaAs at temperature close to 300 K, Hall mobility
µpH=400(300/T)2.3 (cm2 V-1 s-1).

The hole Hall mobility versus hole density.

At T= 300 K, the Hall factor in pure GaAs

rH=1.25.

Transport Properties in High Electric Fields

Field dependences of the electron drift velocity.

Solid curve was calculated by
Dashed and dotted curves are measured data, 300 K

Field dependences of the electron drift velocity for high electric fields, 300 K.

Field dependences of the electron drift velocity at different temperatures.

Fraction of electrons in L and X valleys. nL and nX as a function of electric field F at 77, 160, and 300 K, Nd=0
Dotted curve - L valleys, dashed curve - X valleys.

Mean energy E in Γ, L, and X valleys as a function of electric field F at 77, 160, and 300 K, Nd=0
Solid curve - Γ valleys, dotted curve - L valleys, dashed curve - X valleys.

Frequency dependences of electron differential mobility.
µd is real part of the differential mobility; µd*is imaginary part of differential mobility.
F= 5.5 kV cm-1

The field dependence of longitudinal electron diffusion coefficient D||F.
Solid curves 1 and 2 are theoretical calculations. Dashed curves 3, 4, and 5 are experimental data.
Curve 1 - from
Curve 2 - from
Curve 3 - from
Curve 4 - from
Curve 5 -

Field dependences of the hole drift velocity at different temperatures.

Temperature dependence of the saturation hole velocity in high electric fields

The field dependence of the hole diffusion coefficient.

Impact Ionization

There are two schools of thought regarding the impact ionization in GaAs.

The first one states that impact ionization rates αi and βi for electrons and holes in GaAs are known accurately enough to distinguish such subtle details such as the anisothropy of αi and βi for different crystallographic directions. This approach is described in detail in the work by Dmitriev et al.[1987].

Experimental curves αi and βi versus 1/F for GaAs.

The second school focuses on the values of αi and βi for the same electric field reported by different researches differ by an order of magnitude or more. This point of view is explained by Kyuregyan and Yurkov [1989]. According to this approach we can assume that αi = βi. Approximate formula for the field dependence of ionization rates:
αi = β i =αoexp[δ - (δ2 + (F0 / F)2)1/2]
where αo = 0.245·106 cm-1; β = 57.6 Fo = 6.65·106 V cm-1 (Kyuregyan and Yurkov [1989]).

Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction.

Recombination Parameter

Pure n-type material (no ~ 1014cm-3)
The longest lifetime of holes	τp ~3·10-6 s
Diffusion length Lp = (Dp·τp)1/2	Lp ~30-50 µm.
Pure p-type material
(a)Low injection level
The longest lifetime of electrons	τn ~ 5·10-9 s
Diffusion length Ln = (Dn·τ n)1/2	Ln ~10 µm
(b) High injection level (filled traps)
The longest lifetime of electrons	τ ~2.5·10-7 s
Diffusion length Ln	Ln ~ 70 µm

Surface recombination velocity versus doping density
Different experimental points correspond to different surface treatment methods.

Radiative recombination coefficient

90 K	1.8·10-8cm3/s
185 K	1.9·10-9cm3/s
300 K	7.2·10-10cm3/s

Auger coefficient

300 K	~10-30cm6/s
500 K	~10-29cm6/s

Are You Looking for GaAs substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

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