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N Type Conductivity , InP(Indium Phosphide) Wafer , 2”, Prime Grade , Epi Ready

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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    Buy cheap N Type Conductivity , InP(Indium Phosphide) Wafer , 2”, Prime Grade , Epi Ready from wholesalers
     
    Buy cheap N Type Conductivity , InP(Indium Phosphide) Wafer , 2”, Prime Grade , Epi Ready from wholesalers
    • Buy cheap N Type Conductivity , InP(Indium Phosphide) Wafer , 2”, Prime Grade , Epi Ready from wholesalers

    N Type Conductivity , InP(Indium Phosphide) Wafer , 2”, Prime Grade , Epi Ready

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    Brand Name : PAM-XIAMEN
    Payment Terms : T/T
    Supply Ability : 10,000 wafers/month
    Delivery Time : 5-50 working days
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    N Type Conductivity , InP(Indium Phosphide) Wafer , 2”, Prime Grade , Epi Ready

    N Type Conductivity , InP(Indium Phosphide) Wafer , 2”, Prime Grade , Epi Ready


    PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offer materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.


    2"InP Wafer Specification


    2"InP Wafer Specification
    ItemSpecifications
    Conduction TypeN-typeN-type
    DopantUndopedSulphur
    Wafer Diameter2"
    Wafer Orientation100±0.5°
    Wafer Thickness350±25um
    Primary Flat Length16±2mm
    Secondary Flat Length8±1mm
    Carrier Concentration≤3x1016cm-3(0.8-6)x1018cm-3(0.6-6)x1018cm-3N/A
    Mobility(3.5-4)x103cm2/V.s(1.5-3.5)x103cm2/V.s50-70cm2/V.s>1000cm2/V.s
    ResistivityN/AN/AN/A>0.5x107Ωcm
    EPD<1000cm-2<500cm-2<1x103cm-2<5x103cm-2
    TTV<10um
    BOW<10um
    WARP<12um
    Laser Markingupon request
    Suface FinishP/E, P/P
    Epi Readyyes
    PackageSingle wafer container or cassette

    What is InP wafer?

    Indium phosphide is a semiconducting material similar to GaAs and silicon but is very much a niche product. It’s very effective at developing very high-speed processing and is more expensive than GaAs because of the great lengths to gather and develop the ingredients. Let’s take a look at some more facts about indium phosphide as it pertains to an InP Wafer.


    Impact Ionization

    The dependence of ionization rates for electrons αi and holes βi versus 1/F, 300 K.
    (Cook et al. [1982]).
    Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction, 300 K
    (Kyuregyan and Yurkov [1989]).

    Uses

    InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

    It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.

    It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. The company Infinera uses indium phosphide as its major technological material for manufacturing photonic integrated circuits for the optical telecommunications industry, to enable wavelength-division multiplexing applications.

    InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.


    Are You Looking for an InP Wafer?

    PAM-XIAMEN is your go-to place for everything wafers, including InP wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!


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