N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor

PAM-XIAMEN manufactures high purity single crystal InSb(Indium Antimonide) Wafers for photodiodes or photoelectromagnetic device, Magnetic field sensors using magnetoresistance or the Hall effect, fast transistors (in terms of dynamic switching) due to the high carrier mobility of InSb, in some of the detectors of the Infrared Array Camera on the Spitzer Space Telescope. Our standard wafer diameters range from 1 inch to 3 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer InSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

N Type, InSb Substrate, 3”, Dummy Grade

Optical properties of InSb Wafer

Infrared refractive index

For 120K < T < 360K dn/dT = 1.6·10-11·n

	Refractive index n versus photon energy, 300 K.
	Normal incidence reflectivity versus photon energy, 300 K.
	Absorption coefficient near the intrinsic absorption edge, T = 2K

A ground state Rydberg energy RX1= 0.5 meV.

	Absorption coefficient near the intrinsic absorption edge for different temperatures
	Absorption edge of pure InSb. T (K): 1. 298; 2. 5K;
	Absorption coefficient versus photon energy, T = 300 K.
	Absorption coefficient versus photon energy at different doping levels, n-InSb, T = 130 K no (cm-3): 1. 6.6·1013; 2. 7.5·1017; 3. 2.6·1018; 4. 6·1018;
	Absorption coefficient versus photon energy at different doping levels, p-InSb, T = 5K. po (cm-3): 1. 5.5·1017; 2. 9·1017; 3. 1.6·1018; 4. 2.6·1018; 5. 9.4·1018; 6. 2·1019;

Are You Looking for an InSb substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InSb wafers, send us enquiry today to learn more about how we can work with you to get you the InSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.